| 脚位/封装 | FBGA-170 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 3.0GHz |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 256M |
| Bit Organization | x32 |
| Density | 8G |
| Package Material | Lead free & Halogen free(ROHS compliant) |
| Hynix Memory | H |
| Die Generation | 2nd |
| No Of Banks | 16 banks |
| Product Family | DRAM |
| Shipping Method | tray |
| Operating Temperature | commercial temperature(0°C ~ 85°C) & normal power |